Nitrides
| MATERIAL |
FORMULA |
STANDARD
PURITIES, % |
THEORETICAL
DENSITY, g/cm3 |
MELTING
POINT, oC |
FABRICATION
METHOD |
|
APPLICATIONS |
| Aluminum nitride |
AlN |
99.8
99.0 |
3.26 |
2300 |
Hot-pressed |
|
Nitrides in general show promise of increasing electrical stablility of diodes, transistors and integrated circuits. |
|
| Boron nitride |
BN |
97.5(1) |
2.25 |
3000 |
Hot-pressed |
|
Silicon nitride, in particular, provides excellent insulating properties and deposits faster than silicon dioxide. It acts as a possible medium and as a barrier to sodium diffusion. |
|
| Hafnium nitride |
HfN |
99.5 |
13.8 |
3310 |
Hot-pressed |
|
| Niobium nitride |
NbN |
99.5 |
8.47 |
2300 |
Hot-pressed |
|
| Silicon nitride |
Si3N4 |
99.9(2) |
3.18 |
>1900 |
Hot-pressed |
|
Titanium nitride films increase the wear resistance and life of cutting tools. |
|
| Tantalum nitride |
TaN |
99.5 |
14.4 |
3090 |
Hot-pressed |
|
| Titanium nitride |
TiN |
99.5 |
5.43 |
2950 |
Hot-pressed |
|
Boron nitride films are used for dielectrics, diffusion masks, possivation layers, photoconductors, etc. |
|
| Vanadium nitride |
VN |
99.5 |
6.10 |
2050 |
Hot-pressed |
|
| Zirconium nitride |
ZrN |
99.5 |
7.37 |
2980 |
Hot-pressed |
|
Nitrides are used as diffusion barriers in both silicon and III-V device technology in multilevel metallization schemes involving aluminum as a second level. |
|
|
(1) About 2.5% moisture-resistant binder is used.
(2) Small amounts of MgO are used for strength. |
|
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