| MATERIAL |
FORMULA |
STANDARD
PURITIES, % |
THEORETICAL
DENSITY, g/cm3 |
MELTING
POINT, oC |
FABRICATION
METHOD |
|
APPLICATIONS |
| Aluminum |
Al |
99.999
99.99 |
2.70 |
660 |
1 |
|
Conductive film in IC's. High reflectivity front surface mirrors and reflectors on glass. In oxidized form, interference filters. |
|
| Antimony |
Sb |
99.999
99.5 |
6.62 |
630.5 |
1 & 2 |
|
Semiconducting films. |
|
| Bismuth |
Bi |
99.999
99.5 |
9.80 |
271.3 |
1 & 2 |
|
Ferromagnetic and resistive thin films. |
|
| Boron |
B |
99.5
90-92, 94-96 |
2.34 |
2030 |
2 |
|
Semiconductor. Diffusion layer. |
|
| Cadmium |
Cd |
99.999
99.5 |
8.65 |
320.9 |
1 & 2 |
|
Dielectric thin film. For metallizing paper, etc. |
|
| Chromium |
Cr |
99.95
99.8+ |
7.19 |
1875 |
1,2 & 3 |
|
Excellent adhering film on numerous substrates. Deposit on glass for printed circuit base. Co-deposit with SiO for resistor films. |
|
| Cobalt |
Co |
99.9 |
8.90 |
1495 |
1 & 2 |
|
Ferromagnetic thin films. |
|
| Copper |
Cu |
99.999
99.99 |
8.96 |
1083 |
1 |
|
Junction films in integrated circuits. Contacts. |
|
| Germanium |
Ge |
99.9999
99.999 |
5.32 |
937.4 |
1 |
|
High index film in infrared filters. |
|
| Gold |
Au |
99.999
99.99 |
19.30 |
1063 |
1 |
|
Contacts. Highly reflecting films. |
|
| Graphite |
C |
99.9
99.5 |
2.26 |
3727 |
2 |
|
Lubricant film. Semiconductor applications. |
|
| Hafnium |
Hf |
99.9
(excl. Zr) |
13.10 |
2222 |
1 |
|
Dielectric. Interference layers. |
|
| Indium |
In |
99.999
99.99 |
7.31 |
156.2 |
1 |
|
Superconducting films. Transistor contacts, diodes. |
|
| Iron |
Fe |
99.9 |
7.86 |
1536 |
1 & 2 |
|
Magnetic and memory elements. Ferromagnetic thin films. |
|
| Lead |
Pb |
99.999 |
11.40 |
327.4 |
1 |
|
Semiconducting films. Cyrogenic applications. |
|
| Magnesium |
Mg |
99.99
99.9 |
1.74 |
651 |
1 |
|
Diffusion with bismuth on glass to form ferromagnetic films. |
|
| Manganese |
Mn |
99.95 |
7.43 |
1245 |
2 |
|
Contacts for semiconductors. Adherence film. |
|
| Molybdenum |
Mo |
99.95 |
10.20 |
2610 |
2 |
|
Contacts. Hard, smooth film. Multilayer circuits. |
|
| Nickel |
Ni |
99.995, 99.99
99.97, 99.9 |
8.90 |
1453 |
1 & 2 |
|
Ferromagnetic films. Memory elements. |
|
| Niobium |
Nb |
99.9+ |
8.40 |
2468 |
1 |
|
Anodic films for rectification. |
|
| Palladium |
Pd |
99.95
99.9 |
12.00 |
1552 |
1 & 2 |
|
Corrosion resistant contacts. |
|
| Platinum |
Pt |
99.95
99.9 |
21.45 |
1769 |
1 |
|
Corrosion resistant contacts. Co-deposit with Si. |
|
| Rare Earth |
|
99.9
(excl. Ta) |
varies |
varies |
1 |
|
Misc. applications. |
|
| Rhenium |
Re |
99.99 |
20.53 |
3180 |
2 |
|
Contacts. |
|
| Ruthenium |
Ru |
99.9 |
12.20 |
2500 |
2 |
|
Corrosion resistant contacts. |
|
| Selenium |
Se |
99.999 |
4.50 |
220 |
1 |
|
Photoconductive and rectifier films. |
|
| Silicon |
Si |
99.999 |
2.33 |
1410 |
1 |
|
Mechanical and chemical resistant coating. Interference filter. |
|
| Silver |
Ag |
99.99 |
10.50 |
960.8 |
1 |
|
Reflective film. Conductive contact. Bonding layer. |
|
| Tantalum |
Ta |
99.95 |
16.60 |
2996 |
1 |
|
Thin film capacitor and resistors. |
|
| Tellurium |
Te |
99.99, 99.95
99.5 |
6.25 |
452 |
2 |
|
Blocking contact in thin film devices. |
|
| Tin |
Sn |
99.999 |
7.30 |
231.9 |
1 |
|
Cyrogenic switching devices. |
|
| Titanium |
Ti |
99.9 |
4.51 |
1668 |
1 |
|
Deposited film oxidized to TiO2 as beam splitter or insulator. |
|
| Tungsten |
W |
99.95 |
19.30 |
3410 |
2 |
|
Contacts. Hard, adherent films. |
|
| Vanadium |
V |
99.5-99.7 |
5.96 |
1900 |
1 & 2 |
|
Co-evaporate with SiO for resistor films. |
|
| Zinc |
Zn |
99.999
99.9 |
7.14 |
419.5 |
1 |
|
Capacitor dielectric films. For metalizing paper, etc. |
|
| Zirconium |
Zr |
99.9
(excl. Hf) |
6.49 |
1852 |
1 |
|
Interference filter. On tungsten field emitters to alter emission characteristics. |
|
