Metal Alloys and Intermetallics

MATERIAL	FORMULA	STANDARD PURITIES, %	THEORETICAL DENSITY, g/cm³	MELTING POINT, ^oC	FABRICATION METHOD*	APPLICATIONS
Aluminum-copper	Al - xCu	99.999 99.99	2.7	660	1	Conductor contacts in microcircuits.

Aluminum-silicon	Al - xSi	99.999 99.99	2.7	660	1

Aluminum-silicon copper	Al - xSi - yCu	99.999 99.99	2.7	660	1

Chromium-silicon monoxide	70 wt. % Cr - 30 wt. % SiO	99.9	4.20	—	2	Excellent thin film resistors for integrated circuits.

Chromium-silicon monoxide	60 wt. % Cr - 40 wt. % SiO	99.9	3.69	—	2

Chromium-silicon monoxide	50 wt. % Cr - 50 wt. % SiO	99.9	3.29	—	2

Chromium-silicon monoxide	x wt. % Cr - y wt. % SiO	99.9	varies	varies	2

Cobalt-iron	xCo - yFe	99.9	varies	varies	1 & 2	Magnetic films.

Cobalt-nickle	xCo - yNi	99.9	8.90	1475	1 & 2

Gallium arsenide	GaAs	99.999	5.3	1240	2	Semiconductors.

Gallium phosphide	GaP	99.999	4.14	1480	2

Inconel	78 wt. % Ni - 15 wt. % Cr - 7 wt. % Fe	99.999	8.51	1425	1	Good corrosion resistance. Thin film resistance. Good film adherence.

Indium antimonide	InSb	99.999	5.8	523	2	Semiconductors.

Indium arsenide	InAs	99.999	5.66	943	2	Masers. Coherent emission from diffused diodes.

Indium phosphide	InP	99.999	4.79	1058 at 21 atm	2	Semiconductors.

Indium-tin	xIn - ySn	99.999 99.99	7.3	varies	1	Oxidize to give transparent, conductive films.

Manganese-iron	xMn - yFe	99.9	varies	varies	2	Magnetic films.

Manganese-nickel	xMn - yNi	99.9	varies	varies	2

Nickel-chromium	x wt. % Ni - y wt. % Cr	99.9	7.96-8.48	1340-1675	1 & 2	Thin film resistors. Good adherence on non-metals. Good corrosion resistance.

Nickel-iron	81 wt. % Ni - 19 wt. % Fe	99.9	8.00	1473	1 & 2	Thin films for magnetic heads. Bubble memory devices.

Nickel-iron	xNi - yFe	99.9	varies	varies	1 & 2

Nickel-titanium	xNi - yTi	99.9	varies	varies	1 & 2	A "shape memory" alloy.

Nickel-vanadium	93 wt. % Ni - 7 wt. % V	99.7	8.60	1450	1 & 2	Used in circuits; vanadium renders nickel non-magnetic.

Niobium-titanium	xNb - xTi	99.9	varies	varies	2	Proprietary electronic uses.

Niobium-zirconium	xNb - xZr	99.9	varies	varies	2

Permalloy	79 wt. % Ni - 16.7 wt. % Fe - 4 wt. % Mo - 0.3 wt. % Mn	99.5	8.74	—	1 & 2	Thin films for magnetic heads. Bubble memory devices.

Terbium-iron	xTv - yFe	99.9	varies	varies	2	Magneto-optic, sensitive to light changing flux fields.

Tungsten-titanium	90 wt. % W - 10 wt. % Ti	99.995 (Na<1 ppm)	14.6	1860	2	Diffusion barriers, primarily between Pt silicide contacts and other interconnects.

Tungsten-titanium	90 wt. % W - 10 wt. % Ti	99.9 (Na = 300-500 ppm)	14.6	1860	2

Tungsten-titanium	90 wt. % W - 10 wt. % Ti	99.9 (Na<10 ppm)	14.6	1860	2

Vanadium-aluminum	xV-yAl	99.7	varies	varies	2	Proprietary research uses.

Zirconium-aluminum	xZr-yAl	99.7	varies	varies	2	Proprietary research uses.

* Fabrication Method: (1) Vacuum or air-vacuum melted, then rolled, cut and machined as required. (2) Hot-pressed or fabricated through special press-sinter process. (3) Vacuum hot-pressed or forged.

High Purity Sputtering Targets

Related Links:
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- Precious Metal Conversions
- Thickness Conversion Table
- Periodic Table

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