EVAPORATION
MATERIAL |
TEMPERATURE (șC)
@ VAP. PRESSURE |
EVAPORATION TECHNIQUES |
REMARKS
n = Index
of Refraction |
10-8
TORR |
10-6
TORR |
10-4
TORR |
ELECTRON
BEAM |
CRUCIBLE |
COIL |
BOAT |
 |
Titanium
Monoxide (TiO) |
— |
— |
-1500 |
Good |
Vit. Carbon |
— |
W Mo |
Use gentle preheat to outgas. Films TiO2 if evaporated like TiO2; n = 2.2 |
|
Titanium
Nitride (TiN) |
— |
— |
— |
Good |
— |
— |
Mo |
Sputtering preferred. Decomposes with thermal evaporation. |
|
Titanium
Sesquioxide (Ti2O3) |
— |
— |
— |
Good |
— |
— |
W |
Decomposes. |
|
|
Tungsten (W) |
2117 |
2407 |
2757 |
Good |
— |
— |
— |
Forms volatile oxides. Films hard & adherent. |
|
Tungsten
Boride (WB2) |
— |
— |
— |
Poor |
— |
— |
— |
— |
|
Tungsten
Carbide (W2C) |
1480 |
1720 |
2120 |
Excel. |
— |
— |
C |
— |
|
Tungsten
Telluride (WTe3) |
— |
— |
— |
— |
Quartz |
— |
— |
— |
|
Tungsten
Trioxide (WO3) |
— |
— |
980S |
Good |
— |
— |
W Pt |
Use gentle preheat to outgas. W reduces oxide slightly. n = 1.68 |
|
|
Uranium (U) |
1132 |
1327 |
1582 |
Good |
— |
W |
Mo W |
Films oxidize. |
|
Uranium
Carbide (UC2) |
— |
— |
2100 |
— |
Carbon |
— |
— |
Decomposes. |
|
Uranium
Dioxide (UO2) |
— |
— |
— |
— |
— |
— |
W |
Ta causes decomposition. |
|
Uranium
Fluoride (UF4) |
— |
— |
300 |
— |
— |
— |
Ni |
— |
|
Uranium
Oxide (U3O8) |
— |
— |
— |
— |
— |
— |
W |
Decomposes at 1300șC to UO2. |
|
Uranium
Phosphide (UP2) |
— |
— |
1200 |
— |
— |
— |
Ta |
Decomposes. |
|
Uranium
Sulphide (U2S3) |
— |
— |
1400 |
— |
— |
— |
W |
Slight decomposition. |
|
|
Vanadium (V) |
1162 |
1332 |
1547 |
Excel. |
— |
— |
W Mo |
Wets Mo. EB evaporated films preferred. |
|
Vanadium
Carbide (VC) |
— |
— |
-1800 |
— |
— |
— |
— |
— |
|
Vanadium
Dioxide (VO2) |
— |
— |
-575S |
— |
— |
— |
— |
Deposit metal in 1 x 10-3O2 JVST A2(2) 301 (1984) |
|
Vanadium
Pentoxide (V2O5) |
— |
— |
-500 |
— |
Quartz |
— |
— |
— |
|
|
Ytterbium (Yb) |
520S |
590S |
690S |
Good |
— |
— |
Ta |
— |
|
Ytterbium
Fluoride (YbF3) |
— |
— |
-800 |
— |
— |
— |
Mo |
n = 1.57 @ 3.8” |
|
Ytterbium
Oxide (Yb2O3) |
— |
— |
-1500S |
— |
— |
— |
Ir |
Loses oxygen. |
|
|
Yttrium (Y) |
830 |
973 |
1157 |
Excel. |
Al2O3 |
W |
W Ta |
High Ta solubility. |
|
Yttrium
Aluminum
Oxide (Y3Al5O12) |
— |
— |
— |
Good |
— |
W |
— |
Films not ferroelectric. |
|
Yttrium
Oxide (Y2O3) |
— |
— |
-2000S |
Good |
C |
— |
W |
Loses oxygen, films smooth and clear. n = 1.79 @ 1” |
|
|
Zinc (Zn) |
127 |
177 |
250 |
Excel. |
Al2O3
Quartz |
W |
Mo W
Ta |
Evaporates well under wide range of conditions. |
|
Zinc
Bromide (ZnBr2) |
— |
— |
-300 |
— |
Carbon |
— |
W |
Decomposes. |
|
Zinc
Fluoride (ZnF2) |
— |
— |
-800 |
— |
Quartz |
— |
Pt Ta |
— |
|
Zinc
Nitride (Zn3N2) |
— |
— |
— |
— |
— |
— |
Mo |
Decomposes. |
|
Zinc
Oxide (ZnO) |
— |
— |
-1800 |
Fair |
— |
— |
— |
Anneal in air at 450șC to reoxidize; n = 2.0 JVST 12, 879 (1975) |
|
Zinc
Selenide (ZnSe) |
— |
— |
660 |
— |
Quartz |
W Mo |
Ta W
Mo |
Use gentle preheat to outgas. Evaporates well. n = 2.6 |
|
Zinc
Sulphide (ZnS) |
— |
— |
-800S |
Good |
— |
— |
Ta Mo |
Use gentle preheat to outgas. Films partially decompose. Sticking coefficient varies with
substrate temperature. n 2.3 @ .5” |
|
Zinc
Telluride (ZnTe) |
— |
— |
-600 |
— |
— |
— |
Mo Ta |
Use gentle preheat to outgas. n = 2.85 @ .5” |
|
Zinconium
Nitride (ZrN) |
— |
— |
— |
— |
— |
— |
— |
Reactively evaporate in 10-3 N2 atmosphere. |
|
Zirconium
Oxide (ZrO2) |
— |
— |
-2200 |
Good |
— |
— |
W |
Films oxygen deficient, clear and hard. n = 2.05 @ .75” |
|
Zirconium
Silicide (ZrSi2) |
— |
— |
— |
— |
— |
— |
— |
— |
|
