Carbides

MATERIAL	FORMULA	STANDARD PURITIES, %	THEORETICAL DENSITY, g/cm³	MELTING POINT, ^oC	FABRICATION METHOD	APPLICATIONS
Boron carbide	B₄C	99.5	2.51	2350	Hot-pressed

Chromium carbide	Cr₃C₂	99.5	6.66	1895	Hot-pressed

Hafnium carbide	HfC	99.5	12.7	3890	Hot-pressed

Molybdenum carbide	Mo₂C	99.5	9.18	2400	Hot-pressed

Niobium carbide	NbC	99.5	7.80	3500	Hot-pressed

Silicon carbide	SiC	99.5	3.21	>2200	Hot-pressed	Carbides in general are used for wear-resistant films and semi-conducting films.

Tantalum carbide	TaC	99.5	14.5	3880	Hot-pressed

Titanium carbide	TiC	99.5	4.93	3170	Hot-pressed	Carbides are used as diffusion barriers in both silicon and III-V device technology in multilevel metallization schemes involving aluminum as a second level.

Tungsten carbide	WC	99.5	15.7	2800	Hot-pressed

Tungsten carbide	W₂C	99.5	17.3	2700	Hot-pressed

Tungsten carbide - cobalt	WC - 6 wt. % Co	99.5	14.95	—	Hot-pressed

Tungsten carbide - cobalt	W₂C - 12 wt. % Co	99.5	15.54	—	Hot-pressed

Vanadium carbide	VC	99.5	5.71	2830	Hot-pressed

Zirconium carbide	ZrC	99.5	6.56	3530	Hot-pressed

High Purity Sputtering Targets

MAT-VAC Technology, Inc.
PO Box 2299
Daytona Beach, FL 32115

Tel: (386) 238-7017 | Fax: (386) 238-0976

Contact Us | Request a Quotation